Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

Danković Danijel†^a), Stojadinović Ninoslav^a), Prijić Zoran^a), Manić Ivica^a), Davidović Vojkan^a), Prijić Aneta^a), Djorić-Veljković Snežana^b), Golubović Snežana^a)

Curves of pulsed NBTI degradation (normalized to static stress) versus pulse duty cycle. The graphical illustration of the area with recoverable and permanent components of degradation is indicated as well.