Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET
Danković Danijel†
a)
, Stojadinović Ninoslav
a)
, Prijić Zoran
a)
, Manić Ivica
a)
, Davidović Vojkan
a)
, Prijić Aneta
a)
, Djorić-Veljković Snežana
b)
, Golubović Snežana
a)
Threshold voltage shifts during static and pulsed NBT stress at different duty cycles, f = 18.82 kHz.