Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

Danković Danijel†^a), Stojadinović Ninoslav^a), Prijić Zoran^a), Manić Ivica^a), Davidović Vojkan^a), Prijić Aneta^a), Djorić-Veljković Snežana^b), Golubović Snežana^a)

Threshold voltage shifts during static and pulsed NBT stress at different frequencies, DTC = 50%.