Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

Danković Danijel†^a), Stojadinović Ninoslav^a), Prijić Zoran^a), Manić Ivica^a), Davidović Vojkan^a), Prijić Aneta^a), Djorić-Veljković Snežana^b), Golubović Snežana^a)

Measured transfer I – V characteristics of p-channel power VDMOSFETs during the pulsed ( V _G = −45 V, T = 175 °C, f = 18.82 kHz, DTC = 94.12%) NBT stressing.