Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Zheng Qi-Wen^a),^b),^c), Cui Jiang-Wei†^a),^b), Zhou Hang^a),^b),^c), Yu De-Zhao^a),^b),^c), Yu Xue-Feng^a),^b), Lu Wu^a),^b), Guo Qi^a),^b), Ren Di-Yuan^a),^b)

Memory cell SNM derived by simulation when radiation-induced threshold shifts in pull up PMOSFET and pull down NMOSFET are 100 mV. The side lengths of the black square and the dashed black square represent pre-irradiation and post-irradiation SNM respectively, while the side length of the dotted black square represents SNM only including radiation-induced threshold shift in Q1 and Q3.