Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
Zheng Qi-Wena),b),c), Cui Jiang-Wei†a),b), Zhou Hanga),b),c), Yu De-Zhaoa),b),c), Yu Xue-Fenga),b), Lu Wua),b), Guo Qia),b), Ren Di-Yuana),b)
       
Standby and dynamic current of device loading data pattern AAh during irradiation after 128-h anneal at room temperature, and testing is accomplished after data patterns 55h and AAh have been written into the device.