Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

Zhang Xiao-Yu†^a), Tan Ren-Bing^b), Sun Jian-Dong^a), Li Xin-Xing^a), Zhou Yu^a), Lü Li^a), Qin Hua‡^a)

Variations of the valley of RF reflection signal V _m and conductance with V _g.