Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
Zhang Xiao-Yu†a), Tan Ren-Bingb), Sun Jian-Donga), Li Xin-Xinga), Zhou Yua), Lü Lia), Qin Hua‡a)
       
Variations of reflected voltage signal with frequency at different values of applied V g.