Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
Zhang Xiao-Yu†
a)
, Tan Ren-Bing
b)
, Sun Jian-Dong
a)
, Li Xin-Xing
a)
, Zhou Yu
a)
, Lü Li
a)
, Qin Hua‡
a)
Variations of reflected voltage signal with frequency at different values of applied V
g
.