Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
Zhang Xiao-Yu†a), Tan Ren-Bingb), Sun Jian-Donga), Li Xin-Xinga), Zhou Yua), Lü Lia), Qin Hua‡a)
       
Curves of I ds versus V g at different values of applied V ds. Inset shows the schematic diagram of GaN/AlGaN HEMT.