Content of TOPICAL REVIEW—Topological 2D materials in our journal

Published in last 1 year |  In last 2 years |  In last 3 years |  All Please wait a minute... For selected: Download citations EndNote Ris BibTeX Toggle thumbnails Select Progress on 2D topological insulators and potential applications in electronic devices Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮) Chin. Phys. B, 2020, 29 (9): 097304.   DOI: 10.1088/1674-1056/aba9c5 Abstract （686）   HTML    PDF （3178KB）（335）       Knowledge map    Two-dimensional topological insulators (2DTIs) have attracted increasing attention during the past few years. New 2DTIs with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTIs, ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides (TMDs) and to multi-elemental materials, with different thicknesses, structures, and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportunities for future 2DTI study, especially on the device applications based on the topological properties. Select Topology and ferroelectricity in group-V monolayers Mutee Ur Rehman, Chenqiang Hua(华陈强), Yunhao Lu(陆赟豪) Chin. Phys. B, 2020, 29 (5): 057304.   DOI: 10.1088/1674-1056/ab81ff Abstract （718）   HTML    PDF （5383KB）（679）       Knowledge map    The group-V monolayers (MLs) have been studied intensively after the experimental fabrication of two-dimensional (2D) graphene and black phosphorus. The observation of novel quantum phenomena, such as quantum spin Hall effect and ferroelectricity in group-V elemental layers, has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D limit. In this review, we comprehensively review recent research progress in engineering of topology and ferroelectricity, and several effective methods to control the quantum phase transition are discussed. We then introduce the coupling between topological orders and ferroelectric orders. The research directions and outlooks are discussed at the end of the perspective. It is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems. Select Two-dimensional topological semimetals Xiaolong Feng(冯晓龙), Jiaojiao Zhu(朱娇娇), Weikang Wu(吴维康), and Shengyuan A. Yang(杨声远) Chin. Phys. B, 2021, 30 (10): 107304.   DOI: 10.1088/1674-1056/ac1f0c Abstract （434）   HTML （9）    PDF （2836KB）（312）       Knowledge map    The field of two-dimensional topological semimetals, which emerged at the intersection of two-dimensional materials and topological materials, has been rapidly developing in recent years. In this article, we briefly review the progress in this field. Our focus is on the basic concepts and notions, in order to convey a coherent overview of the field. Some material examples are discussed to illustrate the concepts. We discuss the outstanding problems in the field that need to be addressed in future research.