TY - Chin. Phys. B A1 - Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂) T1 - Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit Y1 - 2021-03-16 JF - Chinese Physics B JO - Chin. Phys. B SP - 48503 EP - VL - 30 IS - 4 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/abcf45 ER -