TY - Chin. Phys. B A1 - Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰) T1 - Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer Y1 - 2016-04-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 48502 EP - 048502 VL - 25 IS - 4 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/25/4/048502 ER -