@article{Xinchuang Zhang(张新创):57301,
author = {Xinchuang Zhang(张新创) and Mei Wu(武玫) and Bin Hou(侯斌) and Xuerui Niu(牛雪锐) and Hao Lu(芦浩) and Fuchun Jia(贾富春) and Meng Zhang(张濛) and Jiale Du(杜佳乐) and Ling Yang(杨凌) and Xiaohua Ma(马晓华) and Yue Hao(郝跃)},
title = {Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment},
publisher = {Chin. Phys. B},
year = {2022},
journal = {Chinese Physics B},
volume = {31},
number = {5},
eid = {057301},
pages = {057301},
keywords = {AlGaN/GaN;high-electron-mobility transistors;low gate leakage;radio frequency;radical treatment},
url = {https://cpb.iphy.ac.cn/EN/abstract/article_124693.shtml},
doi = {10.1088/1674-1056/ac48fb}
}