@article{Jian-Ying Chen(陈建颖):128101,
author = {Jian-Ying Chen(陈建颖) and Xin-Yuan Zhao(赵心愿) and Lu Liu(刘璐) and Jing-Ping Xu(徐静平)},
title = {Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics},
publisher = {Chin. Phys. B},
year = {2019},
journal = {Chinese Physics B},
volume = {28},
number = {12},
eid = {128101},
pages = {128101},
keywords = {MoS#sub#2#/sub# transistor;high-#i#k#/i# dielectric;NH#sub#3#/sub#-plasma treatment;oxygen vacancy;mobility},
url = {https://cpb.iphy.ac.cn/EN/abstract/article_122109.shtml},
doi = {10.1088/1674-1056/ab50fe}
}