DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate
Zi-Xin Chen(陈子馨)1, Wei-Jing Liu(刘伟景)1,†, Jiang-Nan Liu(刘江南)1, Qiu-Hui Wang(王秋蕙)1, Xu-Guo Zhang(章徐国)1, Jie Xu(许洁)1, Qing-Hua Li(李清华)2, Wei Bai(白伟)3, and Xiao-Dong Tang(唐晓东)3
1 College of Electronics and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China; 2 GTA Semiconductor Corporation Limited, Shanghai 200123, China; 3 Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200041, China
Abstract A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (Ion), on/off current ratio (Ion/Ioff), subthreshold swing (SS) transconductance (gm), cut-off frequency (fT) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high Ion (9.98×10 - 4 A/μm), high Ion/Ioff (～ 1011), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.52177185 and 62174055) and Open Fund of Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University (Grant No.2019MIP002).
Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Jiang-Nan Liu(刘江南), Qiu-Hui Wang(王秋蕙), Xu-Guo Zhang(章徐国), Jie Xu(许洁), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate 2022 Chin. Phys. B 31 058501
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