Threshold resistance switching in silicon-rich SiOx thin films

doi:10.1088/1674-1056/25/11/117701

Abstract Si-rich SiO_x and amorphous Si clusters embedded in SiO_x films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment. The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films, which was caused by the formation of clusters due to the local overheating under a large electric field. Besides, the I-V characteristics of the threshold switching showed a dependence on the annealing temperature and the SiO_x thickness. In particular, formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiO_x film, while for the 78 nm-SiO_x film, adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable. This study demonstrates the importance of investigation of both switching modes in resistance random access memory.

Keywords: threshold resistance switching silicon-rich SiO_x thin film annealing

Received: 21 April 2016
Revised: 05 June 2016
Accepted manuscript online:

PACS:	77.80.Fm	(Switching phenomena)
	61.72.Bb	(Theories and models of crystal defects)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

Fund: Project supported by the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. KF2015 02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (Grant No. M201503), Zhejiang Provincial Science and Technology Key Innovation Team, China (Grant No. 2011R50012), and Zhejiang Provincial Key Laboratory, China (Grant No. 2013E10022).

Corresponding Authors: Shi-Hua Huang
E-mail: huangshihua@zjnu.cn

Cite this article:

Da Chen(陈达), Shi-Hua Huang(黄仕华) Threshold resistance switching in silicon-rich SiO_x thin films 2016 Chin. Phys. B 25 117701

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Threshold resistance switching in silicon-rich SiO_x thin films