Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

doi:10.1088/1674-1056/23/10/108501

Abstract The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO₂ warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top corners of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.

Keywords: strain quantum effect tri-gate GOI

Received: 21 March 2014
Revised: 29 April 2014
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	73.63.Nm	(Quantum wires)
	73.50.Bk	(General theory, scattering mechanisms)
	46.25.-y	(Static elasticity)

Corresponding Authors: Liu Xiao-Yan
E-mail: xyliu@ime.pku.edu.cn

About author: 85.30.Tv; 73.63.Nm; 73.50.Bk; 46.25.-y

Cite this article:

Qin Jie-Yu (秦洁宇), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement 2014 Chin. Phys. B 23 108501


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Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

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