Anomalous Hall effect in perpendicular CoFeB thin films

doi:10.1088/1674-1056/23/4/047504

Abstract Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.

Keywords: anomalous Hall effect perpendicular magnetic anisotropy magnetic properties of interfaces

Received: 18 February 2014
Revised: 20 March 2014
Accepted manuscript online:

PACS:	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)
	75.30.Gw	(Magnetic anisotropy)
	75.70.Cn	(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
	75.25.+z

Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 50871120, 11079052, and 11174354).

Corresponding Authors: Zhu Tao
E-mail: tzhu@iphy.ac.cn

About author: 75.47.-m; 75.30.Gw; 75.70.Cn; 75.25.+z

Cite this article:

Zhu Tao (朱涛) Anomalous Hall effect in perpendicular CoFeB thin films 2014 Chin. Phys. B 23 047504

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