Abstract In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness $d$, and insensitively dependent on TSQR's section inner radius $R_1$ and TSQR's inner radius $R_2$. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.
Received: 04 December 2007
Revised: 26 February 2008
Accepted manuscript online:
PACS:
73.21.-b
(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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