Displacement damage effects of low-energy gallium ion irradiation on single-walled carbon nanotube field-effect transistors
Yu Zhang(张宇), Huanling Wang(王焕灵), Chenyin Jiao(焦陈寅), Jiaze Qin(秦嘉泽), Zejuan Zhang(张泽娟), Shenghai Pei(裴胜海), Suhan Tang(汤苏涵), Feiliang Chen(陈飞良), Ge Tang(汤戈), Juan Xia(夏娟), Chuan Wang(王川), Mo Li(李沫), Hongxia Guo(郭红霞), Xiaoping Ouyang(欧阳晓平), and Jian Zhang(张健)
Displacement damage effects of low-energy gallium ion irradiation on single-walled carbon nanotube field-effect transistors
Yu Zhang(张宇), Huanling Wang(王焕灵), Chenyin Jiao(焦陈寅), Jiaze Qin(秦嘉泽), Zejuan Zhang(张泽娟), Shenghai Pei(裴胜海), Suhan Tang(汤苏涵), Feiliang Chen(陈飞良), Ge Tang(汤戈), Juan Xia(夏娟), Chuan Wang(王川), Mo Li(李沫), Hongxia Guo(郭红霞), Xiaoping Ouyang(欧阳晓平), and Jian Zhang(张健)
中国物理B
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2026, (7): 76104
-076104
.
DOI: 10.1088/1674-1056/ae0d58