Improved stability of amorphous InGaZnO 4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines
Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利)
Improved stability of amorphous InGaZnO 4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines
Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利)
中国物理B . 2026, (5): 58103 -058103 .  DOI: 10.1088/1674-1056/ae40da