Uniform wafer-scale MOCVD homoepitaxy of
β-Ga
2O
3 on 2-inch (010) substrates
Xuanze Zhou(周选择), Haozhong Wu(吴昊中), Yuanjie Ding(丁元杰), Ziyuan Wang(王子原), Zhiyu Zhou(周智宇), Ning Xia(夏宁), Song Zhang(张嵩), Guangwei Xu(徐光伟), Hui Zhang(张辉), and Shibing Long(龙世兵)
Uniform wafer-scale MOCVD homoepitaxy of
β-Ga
2O
3 on 2-inch (010) substrates
Xuanze Zhou(周选择), Haozhong Wu(吴昊中), Yuanjie Ding(丁元杰), Ziyuan Wang(王子原), Zhiyu Zhou(周智宇), Ning Xia(夏宁), Song Zhang(张嵩), Guangwei Xu(徐光伟), Hui Zhang(张辉), and Shibing Long(龙世兵)
中国物理B
.
2026, (1): 16801
-016801
.
DOI: 10.1088/1674-1056/ae12e0