Degradation mechanisms of Schottky p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress
Fei Hu(胡飞), Chengbing Pan(潘成兵), Xinyuan Zheng(郑鑫源), Yibo Ning(宁一博), Xueyan Li(李雪燕), and Lixia Zhao(赵丽霞)
Degradation mechanisms of Schottky p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress
Fei Hu(胡飞), Chengbing Pan(潘成兵), Xinyuan Zheng(郑鑫源), Yibo Ning(宁一博), Xueyan Li(李雪燕), and Lixia Zhao(赵丽霞)
中国物理B
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2025, (11): 118501
-118501
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DOI: 10.1088/1674-1056/ade1c0