Regulation mechanism of Si vacancies in unintentional silicon-doped diamond by gas flow in MPCVD
Kai Yang(杨凯), Liangxue Gu(顾梁雪), Genyou Zhao(赵耕右), Kun Tang(汤琨), Bo Feng(冯博), Jiandong Ye(叶建东), Rong Zhang(张荣), Shunming Zhu(朱顺明), and Shulin Gu(顾书林)
Regulation mechanism of Si vacancies in unintentional silicon-doped diamond by gas flow in MPCVD
Kai Yang(杨凯), Liangxue Gu(顾梁雪), Genyou Zhao(赵耕右), Kun Tang(汤琨), Bo Feng(冯博), Jiandong Ye(叶建东), Rong Zhang(张荣), Shunming Zhu(朱顺明), and Shulin Gu(顾书林)
中国物理B
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2025, (11): 118102
-118102
.
DOI: 10.1088/1674-1056/ae07aa