Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures
Yin Luo(罗寅), Keyu Liu(刘科宇), Hao Yuan(袁昊), Zhiwen Zhang(张质文), Chao Han(韩超), Xiaoyan Tang(汤晓燕), Qingwen Song(宋庆文), and Yuming Zhang(张玉明)
Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures
Yin Luo(罗寅), Keyu Liu(刘科宇), Hao Yuan(袁昊), Zhiwen Zhang(张质文), Chao Han(韩超), Xiaoyan Tang(汤晓燕), Qingwen Song(宋庆文), and Yuming Zhang(张玉明)
中国物理B
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2025, (9): 97701
-097701
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DOI: 10.1088/1674-1056/adee8a