Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions
Shi-Wei Zhao(赵世伟), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Xiao-Yu Yan(闫晓宇), Pei-Pei Hu(胡培培), Teng Zhang(张腾), Peng-Fei Zhai(翟鹏飞), Jing-Lai Duan(段敬来), and Jie Liu(刘杰)
Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions
Shi-Wei Zhao(赵世伟), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Xiao-Yu Yan(闫晓宇), Pei-Pei Hu(胡培培), Teng Zhang(张腾), Peng-Fei Zhai(翟鹏飞), Jing-Lai Duan(段敬来), and Jie Liu(刘杰)
中国物理B
.
2025, (7): 78501
-078501
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DOI: 10.1088/1674-1056/adcd45