Prolonging carrier lifetime in P-type 4H-SiC epilayer by thermal oxidation and hydrogen annealing
Ruijun Zhang(张锐军), Mingkun Zhang(张明昆), Guoliang Zhang(张国良), Yujian Chen(陈雨箭), Jia Liu(刘佳), Ziqian Tian(田自谦), Ye Yu(余烨), Peng Zhao(赵鹏), Jiafa Cai(蔡加法), Xiaping Chen(陈厦平), Dingqu Lin(林鼎渠), Shaoxiong Wu(吴少雄), Yuning Zhang(张宇宁), Xingliang Xu(徐星亮), Rongdun Hong(洪荣墩), and Feng Zhang(张峰)
Prolonging carrier lifetime in P-type 4H-SiC epilayer by thermal oxidation and hydrogen annealing
Ruijun Zhang(张锐军), Mingkun Zhang(张明昆), Guoliang Zhang(张国良), Yujian Chen(陈雨箭), Jia Liu(刘佳), Ziqian Tian(田自谦), Ye Yu(余烨), Peng Zhao(赵鹏), Jiafa Cai(蔡加法), Xiaping Chen(陈厦平), Dingqu Lin(林鼎渠), Shaoxiong Wu(吴少雄), Yuning Zhang(张宇宁), Xingliang Xu(徐星亮), Rongdun Hong(洪荣墩), and Feng Zhang(张峰)
中国物理B
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2025, (6): 67201
-067201
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DOI: 10.1088/1674-1056/adc407