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Low leakage current
β
-Ga
2
O
3
MOS capacitors with ALD deposited Al
2
O
3
gate dielectric using ozone as precursor
Zheng-Yi Liao(廖正一), Pai-Wen Fang(方湃文), Xing Lu(卢星), Gang Wang(王钢), and Yan-Li Pei(裴艳丽)
Low leakage current
β
-Ga
2
O
3
MOS capacitors with ALD deposited Al
2
O
3
gate dielectric using ozone as precursor
Zheng-Yi Liao(廖正一), Pai-Wen Fang(方湃文), Xing Lu(卢星), Gang Wang(王钢), and Yan-Li Pei(裴艳丽)
中国物理B . 2025, (
6
): 67304 -067304 . DOI: 10.1088/1674-1056/adc660