Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor
Wentao Yu(于文韬), Long Zhao(赵龙), Yanfei Gao(高延飞), Shiping Gao(高石平), Yuekun Yang(杨悦昆), Chen Pan(潘晨), Shi-Jun Liang(梁世军), and Bin Cheng(程斌)
Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor
Wentao Yu(于文韬), Long Zhao(赵龙), Yanfei Gao(高延飞), Shiping Gao(高石平), Yuekun Yang(杨悦昆), Chen Pan(潘晨), Shi-Jun Liang(梁世军), and Bin Cheng(程斌)
中国物理B
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2025, (1): 18502
-018502
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DOI: 10.1088/1674-1056/ad9c44