Effects of vacancy and external electric field on the electronic properties of the MoSi
2N
4/graphene heterostructure
Qian Liang(梁前), Xiangyan Luo(罗祥燕), Guolin Qian(钱国林), Yuanfan Wang(王远帆), Yongchao Liang(梁永超), and Quan Xie(谢泉)
Effects of vacancy and external electric field on the electronic properties of the MoSi
2N
4/graphene heterostructure
Qian Liang(梁前), Xiangyan Luo(罗祥燕), Guolin Qian(钱国林), Yuanfan Wang(王远帆), Yongchao Liang(梁永超), and Quan Xie(谢泉)
中国物理B
.
2024, (3): 37101
-037101
.
DOI: 10.1088/1674-1056/acef04