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Design and investigation of doping-less gate-all-around TFET with Mg
2
Si source material for low power and enhanced performance applications
Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra
Design and investigation of doping-less gate-all-around TFET with Mg
2
Si source material for low power and enhanced performance applications
Pranav Agarwal, Sankalp Rai, Rakshit Y. A, and Varun Mishra
中国物理B . 2023, (
10
): 107310 -107310 . DOI: 10.1088/1674-1056/acd5c0