Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study
Weijie Wei(魏伟杰), Weifeng Lü(吕伟锋), Ying Han(韩颖), Caiyun Zhang(张彩云), and Dengke Chen(谌登科)
Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study
Weijie Wei(魏伟杰), Weifeng Lü(吕伟锋), Ying Han(韩颖), Caiyun Zhang(张彩云), and Dengke Chen(谌登科)
中国物理B . 2023, (9): 97301 -097301 .  DOI: 10.1088/1674-1056/acaa2c