First-principles study of non-radiative carrier capture by defects at amorphous-SiO
2/Si(100) interface
Haoran Zhu(祝浩然), Weifeng Xie(谢伟锋), Xin Liu(刘欣), Yang Liu(刘杨), Jinli Zhang(张金利), and Xu Zuo(左旭)
First-principles study of non-radiative carrier capture by defects at amorphous-SiO
2/Si(100) interface
Haoran Zhu(祝浩然), Weifeng Xie(谢伟锋), Xin Liu(刘欣), Yang Liu(刘杨), Jinli Zhang(张金利), and Xu Zuo(左旭)
中国物理B
.
2023, (7): 77303
-077303
.
DOI: 10.1088/1674-1056/ac9fc2