×
模态框（Modal）标题
在这里添加一些文本
关闭
关闭
提交更改
取消
确定并提交
×
模态框（Modal）标题
在这里添加一些文本
关闭
An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生)
An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
Weizhong Chen(陈伟中), Liuting Mou(牟柳亭), Haifeng Qin(秦海峰), Hongsheng Zhang(张红升), and Zhengsheng Han(韩郑生)
中国物理B . 2023, (
6
): 67303 -067303 . DOI: 10.1088/1674-1056/ac9045