Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲)
Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲)
中国物理B . 2023, (5): 58501 -058501 .  DOI: 10.1088/1674-1056/ac98a1