Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors
Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君)
Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors
Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君)
中国物理B
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2022, (11): 117302
-117302
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DOI: 10.1088/1674-1056/ac7ccf