A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
中国物理B
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2022, (11): 117105
-117105
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DOI: 10.1088/1674-1056/ac81a6