Impact of Al
xGa
1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al
2O
3/AlGaN/GaN MFSHEMTs
Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)
†, and Yonghe Chen(陈永和)
‡
Impact of Al
xGa
1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al
2O
3/AlGaN/GaN MFSHEMTs
Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)
†, and Yonghe Chen(陈永和)
‡
中国物理B
.
2022, (9): 97307
-097307
.
DOI: 10.1088/1674-1056/ac7b1a