An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智)
An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors
Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智)
中国物理B
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2022, (6): 68502
-068502
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DOI: 10.1088/1674-1056/ac4f55