Combined effects of cycling endurance and total ionizing dose on floating gate memory cells
Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟)
Combined effects of cycling endurance and total ionizing dose on floating gate memory cells
Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟)
中国物理B
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2022, (5): 56107
-056107
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DOI: 10.1088/1674-1056/ac3d80