Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平)
Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平)
中国物理B
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2022, (1): 18501
-018501
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DOI: 10.1088/1674-1056/ac051d