GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川)
GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川)
中国物理B
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2021, (9): 94204
-094204
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DOI: 10.1088/1674-1056/abe930