Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure
Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
中国物理B
.
2021, (8): 87305
-087305
.
DOI: 10.1088/1674-1056/ac0793