Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE
Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰)
Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE
Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰)
中国物理B
.
2021, (6): 67306
-067306
.
DOI: 10.1088/1674-1056/abd6fa