Enhanced interface properties of diamond MOSFETs with Al
2O
3 gate dielectric deposited via ALD at a high temperature
Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭)
Enhanced interface properties of diamond MOSFETs with Al
2O
3 gate dielectric deposited via ALD at a high temperature
Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭)
中国物理B
.
2021, (5): 58101
-058101
.
DOI: 10.1088/1674-1056/abd749