Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate
Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate
Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
中国物理B
.
2021, (5): 58501
-058501
.
DOI: 10.1088/1674-1056/abd73f