Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃)
中国物理B . 2021, (4): 40502 .  DOI: 10.1088/1674-1056/abd470