Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD
Yudong Zhang(张玉栋), Jiale Tang(唐家乐), Yongjie Hu(胡永杰), Jie Yuan(袁杰), Lulu Guan(管路路), Xingyu Li(李星雨), Hushan Cui(崔虎山), Guanghui Ding(丁光辉), Xinying Shi(石新颖), Kaidong Xu(许开东), and Shiwei Zhuang(庄仕伟)
中国物理B
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2021, (4): 48103
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DOI: 10.1088/1674-1056/abea82