Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment
Xing-Ye Zhou(周幸叶), Xin Tan(谭鑫), Yuan-Jie Lv(吕元杰), Guo-Dong Gu(顾国栋), Zhi-Rong Zhang(张志荣), Yan-Min Guo(郭艳敏), Zhi-Hong Feng(冯志红), and Shu-Jun Cai(蔡树军)
中国物理B . 2021, (2): 28502 -0 .  DOI: 10.1088/1674-1056/abb7f6