Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C
Si-Cheng Liu(刘思成), Xiao-Yan Tang(汤晓燕), Qing-Wen Song(宋庆文), Hao Yuan(袁昊), Yi-Meng Zhang(张艺蒙), Yi-Men Zhang(张义门), and Yu-Ming Zhang(张玉明)
中国物理B . 2021, (2): 28503 -0 .  DOI: 10.1088/1674-1056/abc0df